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UPD4664312F9-BE75X-CR2 - 64M-bit(4M-word x 16-bit)MOBILE SPECIFIED RAM

UPD4664312F9-BE75X-CR2_1974595.PDF Datasheet
 Full text search : 64M-bit(4M-word x 16-bit)MOBILE SPECIFIED RAM

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MR26V01G53L 64M-Word x 16-Bit or 128M-Word x 8-Bit Page Mode P2ROM
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UPD23C64380F9-XXX-BC3 UPD23C64340 UPD23C64340F9-BC 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
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UPD29F064115F9-CD5 UPD29F064115GZ-MJH UPD29F064115 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE
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M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
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 Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
 MITSUBISHI[Mitsubishi Electric Semiconductor]
MC-4R128FKE8S-840 Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
 Elpida Memory, Inc.
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MC-4564EC726PFB-A10 MC-4564EC726EFB-A80 MC-4564EC7 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE 64M - Word2位同步动态随机存储器模块注册的类
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NEC[NEC]
NEC Corp.
NEC, Corp.
UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
 NEC Corp.
PerkinElmer, Inc.
W966D6HBGX7I-TR This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
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IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2，银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块）
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